cs3-16b cs3-16d cs3-16m CS3-16N silicon controlled rectifier 16 amp, 200 thru 800 volts to-3 50 mil case central semiconductor corp. tm r1 (18-august 2004) description: the central semiconductor cs3-16b series type is a silicon controlled rectifier designed for sensing circuit applications and control systems. marking code: full part number maximum ratings: (t c =25c unless otherwise noted) symbol cs3 cs3 cs3 cs3 -16b -16d -16m -16n units peak repetitive off-state voltage v drm, v rrm 200 400 600 800 v rms on-state current (t c =90c) i t(rms) 16 a peak one cycle surge (t=10ms) i tsm 160 a i 2 t value for fusing (t=10ms) i 2 t 128 a 2 s peak gate power (tp=10s) p gm 40 w average gate power dissipation p g (av) 1.0 w peak forward gate current (tp=10s) i fgm 4.0 a peak forward gate voltage (tp=10s) v fgm 16 v peak reverse gate voltage (tp=10s) v rgm 5.0 v critical rate of rise of on-state current di/dt 100 a/s storage temperature t stg -40 to +150 c junction temperature t j -40 to +125 c thermal resistance jc 1.5 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min typ max units i drm, i rrm rated v drm, v rrm 10 a i drm, i rrm rated v drm , v rrm , t c =125c 2.0 ma i gt v d =12v, r l =10 ? 3.4 15 ma i h i t =100ma 8.8 20 ma v gt v d =12v, r l =10 ? 0.64 1.50 v v tm i tm =32a, tp=380s 1.40 1.60 v dv/dt v d = 2 / 3 v drm , t c =125c 500 v/s
min max min max a 1.516 1.573 38.50 39.96 b (dia) 0.748 0.875 19.00 22.23 c 0.250 0.450 6.35 11.43 d 0.433 0.516 11.00 13.10 e 0.054 0.065 1.38 1.65 f 0.048 0.051 1.22 1.30 g 1.177 1.197 29.90 30.40 h 0.650 0.681 16.50 17.30 j 0.420 0.440 10.67 11.18 k 0.205 0.225 5.21 5.72 l (dia) 0.151 0.172 3.84 4.36 m 0.984 1.050 25.00 26.67 to-3 50 mil (rev: r0) dimensions symbol inches millimeters central semiconductor corp. tm to-3 50 mil case - mechanical outline cs3-16b cs3-16d cs3-16m CS3-16N silicon controlled rectifier 16 amp, 200 thru 800 volts r1 (18-august 2004) lead code: 1) gate 2) cathode 3) anode marking code: full part number
|
